Φ10000μm Monitor PD Chip

The top-illuminated InGaAs monitor PIN photodiode chip, which is planer structure anode on top and cathode on back. With active area of Φ10000μm, and high responsivity in the wavelength region from 900nm to 1700nm.Applied to monitoring the optical power output from the back facet of various LD and other monitor.

Features

1. Planar structure on n+ InP substrate with top anode contact.
2. Φ10000μm active area.
3. High responsibility.
4. Low dark current.
5. Low operating bias voltage.
6. -40℃ to 85℃ operation range.
7. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE.
8. 100% testing and inspection.
9. Customized chip dimension is available.

Applications

1. Back facet laser power monitoring.