Φ300μm Bottom-illuminated Monitor PD Chip

This InGaAs/InP monitor PIN photodiode chip with large active area, which is planar structure with anode and cathode on top, incident surface on back. With bottom-illuminated active area size is Φ300μm, and high responsivity in the wavelength region from 980nm to 1620nm.Mainly application in monitoring the optical power.

Features

1. Planar structure on SI InP substrate.
2. Bottom-illuminated: Φ300μm active area.
3. High responsibility and low dark current.
4. Anode and cathode on top, wire bond on front.
5. High ESD threshold: >500V.
6. -40℃ to 85℃ operation range.
7. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE.
8. 100% testing and inspection.
9. Customized chip dimension is available.

Applications

1. Monitoring the optical power