10Gbps Φ50μm PIN PD Chip

This high data rate 10Gbps photodiode chip is InGaAs/InP PIN structure and top-illuminated. Features is high responsibility, low capacitance, low dark current, active area size is Φ50μm, anode and cathode bond pad on top for TO-CAN package wire-bonding. Application in 10Gbps receiver.

Features

1. Φ50μm active area.
2. Low capacitance.
3. High responsibility.
4. Low dark current.
5. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE.
6. Data rate up to 10Gbps.
7. 100% testing and inspection.

Applications

1. Long-haul optical networks.
2. 10G Ethernet.
3. Fiber-optic Datacom.
4. WDM, ATM.