10Gbps Φ70μm GaAs PIN PD Chip

This high data rate 10Gbps photodiode chip is GaAs top- illuminated PIN structure. Features is high responsibility, low capacitance, low dark current, active area size is Φ70μm, anode and cathode bond pad on top for TO-CAN package wire-bond, application in fiber channel data transmission, 10Gigabit Ethernet and Multi-mode communication etc.

Features

1. Φ70μm active area.
2. Low capacitance and low dark current.
3. High responsibility.
4. Data rate up to 10Gbps.
5. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE.
6. 100% testing and inspection.

Applications

1. 10Gigabit BASE-SR Ethernet.
2. 10Gbps short range data communication at 850nm.
3. Multi-mode datacom and telecom.
4. 8Gbps Fiber Channel data transmission.
5. Fiber-optic transceivers receivers and transponders.