10Gbps Φ50μm Top-illuminated APD Chip

This 10G avalanche photodiode chip (APD chip) is a kind of P electrode on top and N electrode in bottom structure, with top-illuminated active area size is Φ50μm. This product features high multiplication, low capacitance, high bandwidth, low temperature coefficient and excellent reliability, application in 10G SONET/SDH and 10G PON optical receiver.

Features

1. Φ50μm active area.
2. High multiplication.
3. Low temperature coefficient.
4. 100% testing and inspection.
5. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE.
6. RoHS2.0 (2011/65/EU) compliant.

Applications

1. 10G SONET/SDH
2. 10G PON