120μm Edge-illuminated Monitor PD Chip

The XSJ-10-EMPD-120RB is a side illuminated InGaAs InP PIN monitoring photodetector chip with a planar structure. The anode and cathode are metallized on the front and back, and the chip side detection window is 120umX60um. It is suitable for data centers and telecommunications edge emitting lasers, with high responsiveness in the 980nm to 1620nm wavelength range, and is suitable for non airtight packaging.

Features

1. PN bond pad on top
2. Edge detectable area: 120μmX60μm.
3. High responsibility and low dark current.
4. Supports eutectic soldering processes.
5. 100% testing and inspection.
6. Satisfy non-hermetic packages.
7. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE.
8. RoHS2.0 (2011/65/EU) compliant.

Applications

1. Back facet laser power monitoring.
2. FTTH digital optical communications.
3. Optical interconnection.