12Gbps Φ60μm GaAs PIN PD Chip

This high data rate 12Gbps photodiode chip is GaAs top- illuminated PIN structure. Features is high responsibility, low capacitance, low dark current, active area size is Φ60μm, anode and cathode bond pad on top for TO-CAN package wire-bond, application in fiber channel data transmission.

Features

1. Φ60μm active area.
2. Low capacitance and low dark current.
3. High responsibility.
4. Data rate up to 12Gbps.
5. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE.
6. 100% testing and inspection.

Applications

1. 10Gigabit BASE-SR Ethernet.
2. 8Gbps Fiber Channel data transmission.
3. 12Gbps InfiniBand data transmission.