This InGaAs/InP 1X2 Array monitor PIN photodiode chip with large active area, which is planar structure with anode and cathode on top, incident surface on back. With bottom-illuminated active area size is Φ100μm, and high responsivity in the wavelength region from 980nm to 1620nm.Mainly application in monitoring the optical power.
Features
- Planar structure on SI InP substrate.
- Bottom-illuminated: Φ100μm active area.
- 1X2 array, die pitch: 500μm.
- High responsibility.
- Low dark current.
- Anode and cathode on top, wire bond on front.
- -40℃ to 85℃ operation range.
- Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE.
- 100% testing and inspection.
- Customized chip dimension is available.
- RoHS2.0 (2011/65/EU) compliant.
Applications
- Monitoring the optical power