25Gbps Φ38μm GaAs PIN PD Chip

This high data rate 25Gbps photodiode chip is GaAs top- illuminated PIN structure. Features is high responsibility, low capacitance, low dark current, active area size is Φ38μm, anode and cathode bond pad on top for TO-CAN package wire-bond, application in fiber channel data transmission, 25Gigabit Ethernet and Multi-mode communication etc.

Features

1. Φ38μm active area.
2. Low capacitance and low dark current.
3. High responsibility.
4. Data rate up to 25Gbps.
5. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE.
6. 100% testing and inspection.

Applications

1. 25Gigabit Ethernet/Fiber channel.
2. 25Gbps AOC (Active Optical Cable) receiver at 850nm.
3. 25Gbps VCSEL based parallel optical interconnects.
4. 25Gbps SFP+.
5. 4X25Gbps QSFP.