25Gbps Φ20μm Top-illuminated PIN PD Chip

This high data rate 10Gbps photodiode chip is InGaAs/InP PIN structure and top-illuminated. Features is high responsibility, low capacitance, low dark current, active area size is Φ50μm, anode and cathode bond pad on top for TO-CAN package wire-bonding. Application in 10Gbps receiver.

Features

1. Φ20μm active area.
2. Ground-Signal-Ground (GSG) bond pad structure on top.
3. Low dark current, low capacitance, high responsibility.
4. Date rate up to 25Gbps.
5. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE.
6. 100% testing and inspection.
7. RoHS2.0 (2011/65/EU) compliant.

Applications

1. 100 Gigabit Ethernet
2. 20GHz analog links.
3. High speed test and measurement.