This 3GHz photodiode chip is InGaAs/InP PIN planar structure and top-illuminated 3GHz high responsivity digital/analog PD chip, active area size is Φ70μm. That features are low dark current, low capacitance, high responsivity, thereby obtaining lower second order inter-modulation distortion (IMD2) and composite triple beat distortion (CTB), and excellent reliability. Application in 2.5Gbps and below Optical receiver, EPON ONU and CATV analog optical receiver.
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