4X25Gbps Φ32μm 250μm Die Pitch 1X4 Array PIN PD Chip

This 4X25Gbps Array 100Gbps photodiode chip, which is top-illuminated and mesa structure high data rate digital PIN photodiode chip, active area size is Φ32μm. Its features is high, low capacitance, low dark current and excellent reliability, mainly combination with high performance 4X25Gbps quad channels transimpedance amplifiers(TIA), application in long wavelength applications, high date rate up to 4X25Gbps with single mode fiber optical receiver.

Features

1. Φ32μm active area.
2. Ground-Signal-Ground (GSG) bond pad structure, 4X25G array.
3. Low dark current, low capacitance, high responsibility.
4. Type Bandwidth: 16GHz.
5. Die pitch: 250μm
6. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE.
7. 100% testing and inspection.

Applications

1. IEEE 100 Gigabit Ethernet.
2. 100G CWDM4，PSM4，CLR4
3. 100G(4X25Gbps) links.
4. Single mode datacom and telecom.
5. Fiber-optic transceivers, receiver and transponders.