4X25Gbps Φ38μm 250μm Die Pitch 1X4 Array GaAs PIN PD Chip

This high data rate 100 Gbps photodiode chip is GaAs top- illuminated PIN structure. Features is high responsibility, low capacitance, low dark current, active area size is Φ38μm, anode and cathode bond pad on top for TO-CAN package wire-bond, application in fiber channel data transmission, 100Gigabit Ethernet and Multi-mode communication etc. The product dimensions are specifically tailored for non-hermetic package.

Features

1. Φ38μm active area.
2. Low capacitance, Low dark current, High responsibility.
3. GS bond pad design.
4. Die pitch: 250μm
5. 100% testing and inspection.
6. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE.
7. RoHS2.0 (2011/65/EU) compliant.

Applications

1. 100G SR4