4x28Gbps Φ35μm 250μm Die Pitch 1×4 Array GaAs PIN PD Chip

This high data rate 4X28Gbps NRZ/4X56Gbps PAM-4 photodiode chip is GaAs top- illuminated 1×4 Array PIN structure. Features is high responsibility, low capacitance and low dark current, active area size is Φ35μm, signal and both ground bond pad are design on chip’s top for easy wire-bond, application in 850nm 4X28Gbps/4X56Gbps PAM-4 short-range data optical communication.

Features

1. Φ35μm active area.
2. Low dark current.
3. Ground-Signal-Ground bond pad design.
4. Die pitch: 250μm
5. 100% testing and inspection.
6. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia -GR-468-CORE.
7. RoHS2.0 (2011/65/EU) compliant.

Applications

1. 200G SR4
2. Parallel multimode fiber optical communication