4x56GBaud 750μm Die Pitch 1×4 Array PIN PD Chip

This 4X56GBaud Array 400Gbps photodiode chip, which is top-illuminated and mesa structure high data rate digital PIN photodiode chip, active area size is Φ16μm. Its features is high, low capacitance, low dark current and excellent reliability, application 1200nm to 1600nm with single mode fiber wavelength , with date rate up to 50Gbps long wavelength optical receiver.

Features

1. GSG bond pad structure, 4X56GBaud array.
2. Die pitch: 750μm.
3. Low dark current and high bandwidth
4. 100% testing and inspection.
5. Excellent reliability: All chips have passed the qualification requirements as specified by Telcordia-GR-468-CORE.
6. RoHS2.0 (2011/65/EU) compliant.

Applications

1. 400G DR4/FR4/LR4